K/Ka-Band Eight-Way Power-Combined Power Amplifier in 180 nm E-Mode GaAs
Paper in proceeding, 2025
In this work, the design of a broadband K/Ka-band Power Amplifier (PA) Monolithic Microwave Integrated Circuit (MMIC) in 180 nm E-mode GaAs pHEMT technology is discussed. In small-signal the design has a flat frequency response from 23.8 GHz - 28.7 GHz covering a fractional bandwidth of 19.2%, with a maximum gain of 34.9 dB at 25.5 GHz. On top of that, the PA has a maximum output power of 28.5 dBm and a maximum Power-Added Efficiency (PAE) of 20.6%.
K-Band
MMICs
Gallium Arsenide
Power Amplifiers
Broadband Amplifiers
Author
Rob Theodoor Wilhelm Anton Vissers
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Christian Fager
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Gregor Lasser
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
2025 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, PAWR 2025
26-28
9798331507275 (ISBN)
2025 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, PAWR 2025
San Juan, USA,
San Juan, USA,
Subject Categories (SSIF 2025)
Other Electrical Engineering, Electronic Engineering, Information Engineering
Telecommunications
DOI
10.1109/PAWR63954.2025.10904057