AI-Assisted Deep-Learning-Based Design of High-Efficiency Class F Power Amplifiers
Journal article, 2025

This article presents a deep-learning-based approach for designing Class F power amplifiers (PAs). We use convolutional neural networks (CNNs) to predict the scattering parameters of pixelated electromagnetic (EM) layouts. Using a CNN-based surrogate model and an evolutionary algorithm, we synthesize complex Class F output networks. As a proof of concept, we implement a gallium nitride (GaN) HEMT Class F PA, achieving a measured output power of 41.6 dBm and a drain efficiency of 74% at 2.9 GHz. The prototype also linearly reproduces a 20-MHz modulated signal with an 8.5-dB peak-to-average power ratio (PAPR), achieving an adjacent channel leakage ratio (ACLR) of −50.7 dBc with digital predistortion (DPD). To the best of our knowledge, this is the first deep-learning-based Class F PA design using pixelated layout structures.

deep learning

gallium nitride (GaN)

Artificial intelligence (AI)

waveform engineering

energy efficiency

power amplifier (PA)

Class F

machine learning

harmonic tuning

Author

Han Zhou

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Haojie Chang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

David Widén

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Ludvig Fornstedt

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Gabriel Melin

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Microwave and Wireless Technology Letters

2771957X (ISSN) 27719588 (eISSN)

Areas of Advance

Information and Communication Technology

Infrastructure

Kollberg Laboratory

Driving Forces

Sustainable development

Innovation and entrepreneurship

Roots

Basic sciences

Learning and teaching

Pedagogical work

Subject Categories (SSIF 2025)

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LMWT.2025.3552495

More information

Created

4/3/2025 7