A Balanced 100-114-GHz Millimeter-Wave GaAs MMIC Power Amplifier With High Gain
Journal article, 2025
This letter presents a balanced MMIC power amplifier (PA) operating from 100 to 114 GHz for backhaul applications, fabricated using a commercial 0.1-μ m GaAs pHEMT technology. The amplifier achieves a saturated output power ranging from 20.3 to 24.1 dBm, with a power-added efficiency (PAE) between 5.3% and 11.9% across the operating band. Additionally, the amplifier provides up to 18.2-dB gain with only three common-source stages.
W band
Backhaul
power amplifiers (PAs)
millimeter-wave (mmWave)
Author
Göksu Kaval
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Gotmic AB
Gregor Lasser
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Marcus Gavell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Gotmic AB
Christian Fager
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Microwave and Wireless Technology Letters
2771957X (ISSN) 27719588 (eISSN)
Vol. In PressSubject Categories (SSIF 2025)
Other Electrical Engineering, Electronic Engineering, Information Engineering
Telecommunications
DOI
10.1109/LMWT.2025.3606289