A Balanced 100-114-GHz Millimeter-Wave GaAs MMIC Power Amplifier With High Gain
Artikel i vetenskaplig tidskrift, 2025
This letter presents a balanced MMIC power amplifier (PA) operating from 100 to 114 GHz for backhaul applications, fabricated using a commercial 0.1-μ m GaAs pHEMT technology. The amplifier achieves a saturated output power ranging from 20.3 to 24.1 dBm, with a power-added efficiency (PAE) between 5.3% and 11.9% across the operating band. Additionally, the amplifier provides up to 18.2-dB gain with only three common-source stages.
W band
Backhaul
power amplifiers (PAs)
millimeter-wave (mmWave)
Författare
Göksu Kaval
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gotmic AB
Gregor Lasser
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Marcus Gavell
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gotmic AB
Christian Fager
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
IEEE Microwave and Wireless Technology Letters
2771957X (ISSN) 27719588 (eISSN)
Vol. In PressÄmneskategorier (SSIF 2025)
Annan elektroteknik och elektronik
Telekommunikation
DOI
10.1109/LMWT.2025.3606289