Ultra-Broadband Frequency Multiplier (x8) Chain in 90-nm SiGe BICMOS Technology at H-Band
Paper in proceeding, 2025
This work presents an H-band (220–325 GHz) frequency octupler realized in a 90-nm SiGe BiCMOS process. The 3-dB bandwidth is between 234–305 GHz, resulting in a fractional bandwidth of 26.3 %. The multiplier achieves a conversion gain between 230–310 GHz. The peak output power is −0.5 dBm, using an input power of −5 dBm. The DC power consumption is 122 mW. This type of circuit is suitable for future communication and radar systems.
x8
H-band
SiGe
220–325 GHz
Broadband
Frequency multiplier
Octupler
Author
Frida Strömbeck
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Klaus Aufinger
Infineon Technologies
2025 20th European Microwave Integrated Circuits Conference (EuMIC)
978-2-87487-082-8 (ISBN)
2025 20th European Microwave Integrated Circuits Conference (EuMIC)
Utrecht, Netherlands,
Utrecht, Netherlands,
European Core Technologies for Next Generation Communication-Computing Hardware
European Commission (EC) (EC/HE/101092598), 2023-01-01 -- 2025-12-31.
Towards Energy-Efficient Tbps Wireless Links (TeraGreen)
European Commission (EC) (EC/HC/101139117), 2024-01-01 -- 2028-06-30.
Subject Categories (SSIF 2025)
Other Electrical Engineering, Electronic Engineering, Information Engineering
Telecommunications
DOI
10.5281/zenodo.17702944