Ultra-Broadband Frequency Multiplier (x8) Chain in 90-nm SiGe BICMOS Technology at H-Band
Paper i proceeding, 2025
This work presents an H-band (220–325 GHz) frequency octupler realized in a 90-nm SiGe BiCMOS process. The 3-dB bandwidth is between 234–305 GHz, resulting in a fractional bandwidth of 26.3 %. The multiplier achieves a conversion gain between 230–310 GHz. The peak output power is −0.5 dBm, using an input power of −5 dBm. The DC power consumption is 122 mW. This type of circuit is suitable for future communication and radar systems.
x8
H-band
SiGe
220–325 GHz
Broadband
Frequency multiplier
Octupler
Författare
Frida Strömbeck
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Klaus Aufinger
Infineon Technologies
2025 20th European Microwave Integrated Circuits Conference (EuMIC)
978-2-87487-082-8 (ISBN)
2025 20th European Microwave Integrated Circuits Conference (EuMIC)
Utrecht, Netherlands,
Utrecht, Netherlands,
European Core Technologies for Next Generation Communication-Computing Hardware
Europeiska kommissionen (EU) (EC/HE/101092598), 2023-01-01 -- 2025-12-31.
Towards Energy-Efficient Tbps Wireless Links (TeraGreen)
Europeiska kommissionen (EU) (EC/HC/101139117), 2024-01-01 -- 2028-06-30.
Ämneskategorier (SSIF 2025)
Annan elektroteknik och elektronik
Telekommunikation
DOI
10.5281/zenodo.17702944