Wafer-scale single-crystalline graphene transferred from SiC exhibiting Landau quantization
Journal article, 2026
Producing large-area single-crystalline graphene is key to realizing its full potential in advanced applications, including twistronics. Yet, controlling graphene growth kinetics to avoid grain boundaries or multilayer growth remains challenging. Here, we demonstrate the possibility to obtain single-crystalline graphene free of multilayer domains via a facile one-step delamination of epitaxial graphene from silicon carbide (SiC). We find that this is enabled by a specific surface reconstruction of 4H-SiC(0001) that we achieve under our growth conditions. The high crystalline quality of graphene after delamination and transfer from the SiC substrate is confirmed by the observation of key fingerprints of Dirac fermions in quantum transport: ambipolar charge transport, Shubnikov–de Haas oscillations up to filling factor ν=4N+2=74, with N the Landau index, Berry phase of π, and half-integer quantum Hall effect in cm-sized crystals. The scalability of our process, explored with recycled 4”-SiC wafers, represents an advance toward large-scale integration of high-performance graphene applications.
Epitaxial graphene
Single crystal
Graphene
Wafer-scale
Delamination
Quantum Hall effect
Author
Johanna Udén
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Joyal Jain Palakulam
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Awse S A Salha
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Technology
Per Hyldgaard
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Elsebeth Schröder
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Magnus H. Berntsen
Royal Institute of Technology (KTH)
Maciej Dendzik
Royal Institute of Technology (KTH)
Wanyu Chen
Royal Institute of Technology (KTH)
Oscar Tjernberg
Royal Institute of Technology (KTH)
Manasi Shah
Clemson University
Rodrigo Martinez-Duarte
Clemson University
Hans He
RISE Research Institutes of Sweden
Johannes Hofmann
Royal Institute of Technology (KTH)
University of Gothenburg
Thilo Bauch
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Naveen Shetty
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Samuel Lara Avila
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Carbon
0008-6223 (ISSN)
Vol. 260 121963Subject Categories (SSIF 2025)
Materials Chemistry
Condensed Matter Physics
Areas of Advance
Nanoscience and Nanotechnology
Production
Life Science Engineering (2010-2018)
Materials Science
Roots
Basic sciences
Infrastructure
Chalmers e-Commons (incl. C3SE, 2020-)
DOI
10.1016/j.carbon.2026.121963