Wafer-scale single-crystalline graphene transferred from SiC exhibiting Landau quantization
Artikel i vetenskaplig tidskrift, 2026
Producing large-area single-crystalline graphene is key to realizing its full potential in advanced applications, including twistronics. Yet, controlling graphene growth kinetics to avoid grain boundaries or multilayer growth remains challenging. Here, we demonstrate the possibility to obtain single-crystalline graphene free of multilayer domains via a facile one-step delamination of epitaxial graphene from silicon carbide (SiC). We find that this is enabled by a specific surface reconstruction of 4H-SiC(0001) that we achieve under our growth conditions. The high crystalline quality of graphene after delamination and transfer from the SiC substrate is confirmed by the observation of key fingerprints of Dirac fermions in quantum transport: ambipolar charge transport, Shubnikov–de Haas oscillations up to filling factor ν=4N+2=74, with N the Landau index, Berry phase of π, and half-integer quantum Hall effect in cm-sized crystals. The scalability of our process, explored with recycled 4”-SiC wafers, represents an advance toward large-scale integration of high-performance graphene applications.
Graphene
Epitaxial graphene
Delamination
Wafer-scale
Quantum Hall effect
Single crystal
Författare
Johanna Udén
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Joyal Jain Palakulam
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Awse S A Salha
Chalmers, Mikroteknologi och nanovetenskap, Kvantteknologi
Per Hyldgaard
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Elsebeth Schröder
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Magnus H. Berntsen
Kungliga Tekniska Högskolan (KTH)
Maciej Dendzik
Kungliga Tekniska Högskolan (KTH)
Wanyu Chen
Kungliga Tekniska Högskolan (KTH)
Oscar Tjernberg
Kungliga Tekniska Högskolan (KTH)
Manasi Shah
Clemson University
Rodrigo Martinez-Duarte
Clemson University
Hans He
RISE Research Institutes of Sweden
Johannes Hofmann
Göteborgs universitet
Kungliga Tekniska Högskolan (KTH)
Thilo Bauch
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Naveen Shetty
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Samuel Lara Avila
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Carbon
0008-6223 (ISSN)
Vol. 260 121963Ämneskategorier (SSIF 2025)
Materialkemi
Den kondenserade materiens fysik
DOI
10.1016/j.carbon.2026.121963