Characterization of semiconducting glaze by dielectric spectroscopy in frequency domain
Paper in proceedings, 2004

nonlinear voltage dependence

SnO/sub 2/

electrical contacts

semiconducting glaze

glass

polarization relaxation

electrical contacts

chemical analysis

resistivity

dc conductance

frequency domain

IV-VI semiconductors

dielectric spectroscopy

electrical resistivity

chemical analysis

tin oxide particles

dielectric polarisation

4 micron

dielectric relaxation

structural analysis

scanning electron microscopy

glass

low-conductive barrier

dielectric response

10/sup 8/ to 10/sup 9/ ohmm

glassy layer

scanning electron microscopy

circuit model

Author

Heike Ullrich

Department of Electric Power Engineering, High voltage engineering

Stanislaw Gubanski

Department of Electric Power Engineering, High voltage engineering

Solid Dielectrics, 2004. ICSD 2004. Proceedings of the 2004 IEEE International Conference on

123-126

Subject Categories

Materials Engineering

Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017