Integrated Front-ends for Millimeterwave Applications Using III-V Technologies
Paper in proceeding, 2007
Recent results from the Microwave Electronics Laboratory at MC2, Chalmers University, on mil-limeterwave front-end circuits based on III-V-technologies such as mixers, amplifiers, frequency multipliers, IF-amplifiers with gain-control, and VCOs are presented. Reflection type VCOs, cross coupled pair and balanced Colpitt VCO, have been designed in both HEMT and HBT tech-nologies and results are compared. Various balanced and single ended 7 – 28 GHz MMIC fre-quency multipliers are described and compared. Single ended, balanced and single sideband mixers are also reported. Examples of multi-stage mHEMT and pHEMT wideband amplifier for example covering 43-64 GHz with a gain of 24 dB, a minimum noise figure of 2.5 dB and ripple of 2 dB are shown. In order to reduce the manufacturing cost for future 60 GHz products, a high integration level is necessary. Recent results on mHEMT and pHEMT multifunctional re-ceiver/transmitters utilizing the described circuits are reported.
Author
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Sten Gunnarsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Camilla Kärnfelt
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Ferndahl
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Arne Alping
Proceedings of AACD, 16th Workshop on Advances in Analogue Circuit Design
347-362
978-140208262-7 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1007/978-1-4020-8263-4_17
ISBN
978-140208262-7