Integrated Front-ends for Millimeterwave Applications Using III-V Technologies
Paper in proceedings, 2007

Recent results from the Microwave Electronics Laboratory at MC2, Chalmers University, on mil-limeterwave front-end circuits based on III-V-technologies such as mixers, amplifiers, frequency multipliers, IF-amplifiers with gain-control, and VCOs are presented. Reflection type VCOs, cross coupled pair and balanced Colpitt VCO, have been designed in both HEMT and HBT tech-nologies and results are compared. Various balanced and single ended 7 – 28 GHz MMIC fre-quency multipliers are described and compared. Single ended, balanced and single sideband mixers are also reported. Examples of multi-stage mHEMT and pHEMT wideband amplifier for example covering 43-64 GHz with a gain of 24 dB, a minimum noise figure of 2.5 dB and ripple of 2 dB are shown. In order to reduce the manufacturing cost for future 60 GHz products, a high integration level is necessary. Recent results on mHEMT and pHEMT multifunctional re-ceiver/transmitters utilizing the described circuits are reported.

Author

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Sten Gunnarsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Camilla Kärnfelt

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Ferndahl

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Arne Alping

Proceedings of AACD, 16th Workshop on Advances in Analogue Circuit Design

347-362

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1007/978-1-4020-8263-4_17

ISBN

978-140208262-7

More information

Created

10/7/2017