Integrated Front-ends for Millimeterwave Applications Using III-V Technologies

Paper i proceeding, 2007

Recent results from the Microwave Electronics Laboratory at MC2, Chalmers University, on mil-limeterwave front-end circuits based on III-V-technologies such as mixers, amplifiers, frequency multipliers, IF-amplifiers with gain-control, and VCOs are presented. Reflection type VCOs, cross coupled pair and balanced Colpitt VCO, have been designed in both HEMT and HBT tech-nologies and results are compared. Various balanced and single ended 7 – 28 GHz MMIC fre-quency multipliers are described and compared. Single ended, balanced and single sideband mixers are also reported. Examples of multi-stage mHEMT and pHEMT wideband amplifier for example covering 43-64 GHz with a gain of 24 dB, a minimum noise figure of 2.5 dB and ripple of 2 dB are shown. In order to reduce the manufacturing cost for future 60 GHz products, a high integration level is necessary. Recent results on mHEMT and pHEMT multifunctional re-ceiver/transmitters utilizing the described circuits are reported.