High-frequency capacitance of bipolar resonant tunneling diodes
Journal article, 1996

The high-frequency characteristics of bipolar resonant tunneling diodes are experimentally investigated at room temperature. The electron accumulation and discharging in these resonant tunneling light-emitting diodes are studied at frequencies up to 35 GHz. The experiments show capacitance peaks due to electron charge disappearing from the quantum well. The measurements are found to be in agreement with our theoretical model for the calculation of the high-frequency characteristics of resonant tunneling devices. The high-frequency characteristics of the bipolar light-emitting resonant tunneling diode are compared to the unipolar resonant tunneling diode and the resonant interband tunneling diode. The comparison shows a similar discharging characteristic of the quantum well, but a different overall variation of the capacitance.

ALUMINIUM ARSENIDES

QUANTUM WELLS

RESONANCE

GALLIUM ARSENIDES

CAPACITANCE

TUNNEL DIODES

LIGHT EMITTING DIODES

FREQUENCY DEPENDENCE

Author

Kristel Fobelets

Chris Van Hoof

Jan Genoe

Jan Stake

Department of Microwave Technology

Lennart Lundgren

Department of Microwave Technology

Gustaaf Borghs

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 79 2 905-910

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Control Engineering

Condensed Matter Physics

DOI

10.1063/1.360870

More information

Created

10/7/2017