High-frequency capacitance of bipolar resonant tunneling diodes

Artikel i vetenskaplig tidskrift, 1996

The high-frequency characteristics of bipolar resonant tunneling diodes are experimentally investigated at room temperature. The electron accumulation and discharging in these resonant tunneling light-emitting diodes are studied at frequencies up to 35 GHz. The experiments show capacitance peaks due to electron charge disappearing from the quantum well. The measurements are found to be in agreement with our theoretical model for the calculation of the high-frequency characteristics of resonant tunneling devices. The high-frequency characteristics of the bipolar light-emitting resonant tunneling diode are compared to the unipolar resonant tunneling diode and the resonant interband tunneling diode. The comparison shows a similar discharging characteristic of the quantum well, but a different overall variation of the capacitance.