XPS calibration study of thin-film nickel silicides
Journal article, 2009

This paper presents a systematic X-ray photoelectron spectroscopy (XPS)study of the Ni silicides Ni3Si, Ni31Si12, Ni2Si, NiSi and NiSi2 produced by annealing of sputtered thin films. The in situ XPS study focuses on both the core level peaks and Auger peaks. The peak positions, shapes, satellites as well as Auger parameters are compared for different silicides. The factors that influence the Ni core level peak shifts are discussed. The Ni 2p3/2 peak shape and satellites are correlated with the valence band structure. The effect of argon ion etching on surface composition and chemical states is also investigated.

Wagner plot

XPS

Ni silicides

depth profile

Auger parameter

core level

Author

Yu Cao

Chalmers, Materials and Manufacturing Technology, Surface and Microstructure Engineering

Lars Nyborg

Chalmers, Materials and Manufacturing Technology, Surface and Microstructure Engineering

Urban Paul Einar Jelvestam

Chalmers, Materials and Manufacturing Technology, Surface and Microstructure Engineering

Surface and Interface Analysis

0142-2421 (ISSN) 1096-9918 (eISSN)

Vol. 41 6 471-483

Subject Categories

Manufacturing, Surface and Joining Technology

DOI

10.1002/sia.3050

More information

Created

10/8/2017