Direct observation of lateral carrier diffusion in ridge waveguide InGaNAs lasers
Journal article, 2009

We present results from measurements of the subthreshold lateral spontaneous emission profile in 1.3-mu m wavelength ridge waveguide InGaNAs quantum-well lasers using a scanning near-field optical microscopy technique. The measurements reveal the presence of significant lateral carrier diffusion which has a profound effect on the temperature dependence of the threshold current. This effect is frequently omitted when the characteristic temperature of the threshold current is considered.

Characteristic temperature

Lateral carrier diffusion

InGaNAs

Scanning near-field optical microscopy (SNOM)

Semiconductor lasers

Author

Göran Adolfsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Jörgen Bengtsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Jun Lim

University of Nottingham

Ville Vilokkinen

Modulight, Inc.

P. Melanen

Modulight, Inc.

IEEE Photonics Technology Letters

1041-1135 (ISSN)

Vol. 21 134 134-136

Subject Categories

Telecommunications

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LPT.2008.2009128

More information

Latest update

2/28/2018