Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD
Paper in proceedings, 2005

Author

Mariusz Rudzinski

Vincent Desmaris

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Paul Van Hal

J Weyher

Paul Hageman

Kristina Dynefors

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Thomas Rödle

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Pol larsen

International Conference on Nitride Semiconductor ICNS-6

Subject Categories

Manufacturing, Surface and Joining Technology

Other Engineering and Technologies not elsewhere specified

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017