Effects of nitrogen incorporation on the properties of GaInNAs quantum well structures
Journal article, 2005

We report results from theoretical and experimental investigations of GaInNAs/GaAs quantum well structures. Optical transition energies for samples with different In and N concentrations were determined by photoluminescence measurements. The results show that the reduction of the ground-state transition energy by the introduction of N decreases with increasing In concentration. The experimental data are compared with calculations using the effective-mass approximation. Modifications of the band-gap energy due to N incorporation were accounted for using the two-level repulsion model. Proper effective-mass and band offset values, based on recent experimental work, were used. Calculated and measured transition energies show good agreement. The critical thickness, lattice constant, strain, and optical transition energies are discussed for GaInNAs/GaAs quantum well structures tuned for emission at 1.3 and 1.55 ┬Ám, in particular. Such a simple model, within the effective-mass approximation, is a very useful guide for device design.

Author

Qing Xiang Zhao

University of Gothenburg

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2)

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Magnus Willander

University of Gothenburg

Yang Jinghai

Jilin Normal University

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 97 7 073714-

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1063/1.1873041

More information

Created

10/7/2017