Interfaces between 4H-SiC and thermally grown SiO2: Microstructure, nanochemistry, and near-interface traps

E. Pippel; J Woltersdorf; Halldor Olafsson; Einar Sveinbjörnsson

Interfaces between 4H-SiC and thermally grown SiO2: Microstructure, nanochemistry, and near-interface traps
Journal article, 2005

Author

E. Pippel

J Woltersdorf

Halldor Olafsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Einar Sveinbjörnsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Journal of Applied Physics

Vol. 97 034302-

Subject Categories

Condensed Matter Physics

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Created

10/6/2017

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Interfaces between 4H-SiC and thermally grown SiO2: Microstructure, nanochemistry, and near-interface traps Journal article, 2005