Sb-HEMT: Toward 100-mV Cryogenic Electronics
Journal article, 2010
In this paper, we present a first full set of characteristics (dc, f(T), f(max), and noise) of InAs/AlSb high-electron mobility transistors (HEMTs) operating under cryogenic temperature and low-power conditions. Those results are systematically compared and deeply analyzed at room temperature and 77 K. The characteristics improvement achieved at 77 K open up the possibility to develop ultralow-power cryogenic electronics (low-noise amplifier), featuring excellent high-frequency/noise performances below 100-mV dc biasing.
alsb/inas hemts
mosfet
field-effect transistors
Antimonide-based compound semiconductor
impact ionization
III-V semiconductors
noise
amplifier
low-power electronics
high-electron mobility transistors (HEMTs)
temperature
high-frequency
cryogenic electronics
InAs/AlSb
inas/alsb hemt
Author
A. Noudeviwa
Lille 1 University of Science and Technology
Y. Roelens
Lille 1 University of Science and Technology
F. Danneville
Lille 1 University of Science and Technology
A. Olivier
Lille 1 University of Science and Technology
N. Wichmann
Lille 1 University of Science and Technology
N. Waldhoff
Lille 1 University of Science and Technology
S. Lepilliet
Lille 1 University of Science and Technology
G. Dambrine
Lille 1 University of Science and Technology
L. Desplanque
Lille 1 University of Science and Technology
X. Wallart
Lille 1 University of Science and Technology
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
S. Bollaert
Lille 1 University of Science and Technology
IEEE Transactions on Electron Devices
0018-9383 (ISSN) 15579646 (eISSN)
Vol. 57 8 1903-1909 5487381Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/TED.2010.2050109