Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications
Journal article, 2011

We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the superconducting transition onset temperature (TC) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature TC = 11.3 K and critical current density of about 2.5 MA cm−2 at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.

thin films

THz

superconductor

epitaxial growth

hot electron bomometer

NbN

Author

Dimitar Milkov Dochev

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Vincent Desmaris

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Alexey Pavolotskiy

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Denis Meledin

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Zonghe Lai

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Anne Henry

Linköping University

Erik Janzén

Linköping University

E. Pippel

Max Planck Institute

J Woltersdorf

Max Planck Institute

Victor Belitsky

Chalmers, Earth and Space Sciences, Advanced Receiver Development

Superconductor Science and Technology

0953-2048 (ISSN) 1361-6668 (eISSN)

Vol. 24 3 035016 (6pp)- 035016

Advanced Radio Astronomy in Europe (RADIONET-FP7)

European Commission (FP7), 2009-01-01 -- 2012-06-30.

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Condensed Matter Physics

DOI

10.1088/0953-2048/24/3/035016

More information

Latest update

2/28/2018