Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs
Paper in proceedings, 2011

In this work, by means of Monte Carlo simulations, the static and dynamic performance of InAs/AlSb HEMTs at low drain voltages is analyzed. A very good agreement between experimental and simulation results has been obtained not only for the static behavior, but also for small signal equivalent circuit parameters like C gs , C gd , f t and f c . Problems arise when trying to reproduce the values of g d and C ds due to the experimental frequency dispersion, leading also to discrepancies in the values obtained for the intrinsic g m and also f max . © 2011 IEEE.

Monte Carlo simulations

device modeling

InAs/AlSb HEMTs

Author

Helena Rodilla

University of Salamanca

T. Gonzalez

University of Salamanca

J. Mateos

University of Salamanca

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February through 11 February

5744234

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/SCED.2011.5744234

ISBN

978-142447863-7

More information

Latest update

9/3/2018 1