Monte Carlo study of the noise performance of isolated-gate InAs HEMTs
Paper in proceeding, 2011
In this work, the noise performance of an InAs/AlSb 225-nm isolated-gate HEMT has been studied by means of Monte Carlo (MC) simulations. Firstly, the experimental DC behavior and the intrinsic small signal equivalent circuit parameters have been adequately reproduced in order to validate the model. Then, the extrinsic T and max have been obtained and compared with experimental data, getting a good agreement for T but some discrepancies for max . Finally, the intrinsic and extrinsic noise characteristics of the InAs based HEMT have been simulated, showing an excellent noise performance (F min =0.3 dB@10 GHz), comparable to that obtained in InGaAs HEMTs with a much shorter gate length of 50 nm. © 2011 IEEE.
InAs/AlSb HEMTs
Monte Carlo simulations
noise
Author
H. Rodilla
University of Salamanca
Beatriz G. Vasallo
University of Salamanca
J. Mateos
University of Salamanca
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
T. Gonzalez
University of Salamanca
21st International Conference on Noise and Fluctuations, ICNF 2011; Toronto, ON; 12 June 2011 through 16 June 2011
184-187
978-145770192-4 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ICNF.2011.5994295
ISBN
978-145770192-4