Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs
Journal article, 2011

In this paper, the best linear approximation (BLA) is extended to include second-order nonlinearities. This extension is particularly useful for the analysis of low-frequency (LF) distortion due to self-mixing. The self-mixing of a modulated signal due to even-order nonlinear distortion creates a spectrum around dc, as well as around the high order even harmonics. The frequency response at dc can be used to determine long-term memory effects such as trapping and self-heating. The extended BLA is extracted for a GaN-based HEMT to analyze the LF distortion and demonstrate the possibilities with the proposed method.

gallium nitride (GaN)

linear characteristics

high electron-mobility transistors (HEMTs)

Linear approximation

nonlinear distortion

Author

Mattias Thorsell

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Guillaume Pailloncy

Yves Rolain

Vrije Universiteit Brussel (VUB)

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 59 12 1-8

Areas of Advance

Information and Communication Technology

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TMTT.2011.2169423

More information

Latest update

4/30/2018