Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates
Journal article, 2011

Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.

resonators

Carbon nanotube

sheets

field effect transistor

electrode

graphene

movable gate

performance

monolayer graphene

Author

J. Svensson

Lund University

N. Lindahl

University of Gothenburg

H. Yun

Konkuk University

M. Seo

Konkuk University

Daniel Midtvedt

Chalmers, Applied Physics, Condensed Matter Theory

Yury Tarakanov

Chalmers, Applied Physics, Condensed Matter Theory

Niclas Lindvall

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

O. Nerushev

University of Edinburgh

Jari Kinaret

Chalmers, Applied Physics, Condensed Matter Theory

SangWook Lee

Konkuk University

Eleanor E B Campbell

University of Edinburgh

Konkuk University

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. 11 9 3569-3575

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Other Physics Topics

Infrastructure

Nanofabrication Laboratory

DOI

10.1021/nl201280q

More information

Latest update

3/2/2018 9