Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

Journal article, 2012

In this work, the extrinsic dynamic behavior and noise performance of a 225 nm isolated-gate InAs/AlSb high electron mobility transistor (HEMT) have been studied by means of Monte Carlo simulations. A very good agreement with experimental results has been achieved for fT . Discrepancies between experimental and simulated f max have been observed and attributed to the experimental frequency dispersion of gd and Cds. The simulations of the intrinsic and extrinsic noise parameters indicate an excellent performance for this device (Fmin = 0.3 dB at 10 GHz) even if we confirm that the presence of the native oxide under the gate induces a significant decrease in fT and f max of around 20%, together with an increase of noise figure and noise resistance.