Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates
Paper in proceeding, 2012

Large area uniform nanocrystalline graphene is grown by chemical vapor deposition on arbitrary insulating substrates that can survive ∼1000°C. The as-synthesized graphene is nanocrystalline with a domain size in the order of ∼10 nm. The material possesses a transparency and conductivity similar to standard graphene fabricated by exfoliation or catalysis. A noncatalytic mechanism is proposed to explain the experimental phenomena. The developed technique is scalable and reproducible, compatible with the existing semiconductor technology, and thus can be very useful in nanoelectronic applications such as transparent electronics, nanoelectromechanical systems, as well as molecular electronics.

nanoelectronics

insulator

chemical vapor deposition

Graphene

Author

Jie Sun

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Niclas Lindvall

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

M. T. Cole

University of Cambridge

K. B. K. Teo

Aixtron

Avgust Yurgens

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. NEMS 2012, Kyoto, 5 - 8 March 2012

11-14
978-146731124-3 (ISBN)

Areas of Advance

Nanoscience and Nanotechnology

Infrastructure

Nanofabrication Laboratory

Subject Categories

Chemical Sciences

DOI

10.1109/NEMS.2012.6196711

ISBN

978-146731124-3

More information

Latest update

10/15/2020