Development of a 557 GHz GaAs monolithic membrane-diode mixer
Paper in proceeding, 2012
We present the development of a monolithically integrated 557 GHz membrane Schottky diode mixer. RF test shows state-of-the-art performance with an optimum receiver noise temperature below 1300 K DSB and an estimated mixer DSB conversion loss of 9 dB and a mixer DSB noise temperature of 1100 K including all losses.
membrane circuits
submillimeter wave mixers
Schottky diodes
receivers
Author
Huan Zhao Ternehäll
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
GigaHertz Centre
Vladimir Drakinskiy
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
GigaHertz Centre
Peter Sobis
GigaHertz Centre
Johanna Hanning
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
GigaHertz Centre
Tomas Bryllert
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Aik-Yean Tang
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
GigaHertz Centre
Jan Stake
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
10928669 (ISSN)
102-1059781467317252 (ISBN)
Areas of Advance
Information and Communication Technology
Infrastructure
Nanofabrication Laboratory
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ICIPRM.2012.6403330
ISBN
9781467317252