High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires
Journal article, 2012
An on-chip internal stress-based testing device has been developed in order to deform silicon nanoribbons and nanowires up to large strains enabling high throughput of data. The fracture strain and survival probability distribution have been generated for 50-nm-thick and 50- or 500-nm-wide specimens with lengths varying between 2.5 and 10 mu m. Fracture strains reaching up to 5% are attained in the smallest specimens, whereas 90% of the specimens survive 2.5% deformation. This testing platform opens an avenue to investigate and use electromechanical couplings appearing under large mechanical stress or large deformation.
strength
film mechanical-properties
stress
p37
aluminum
nanoelectromechanical systems (NEMS)
freestanding thin-films
material-testing-system
v234
giant piezoresistance
operties microstructure and processing
youngs modulus
Fracture strain
materials
bulge test
on-chip testing
mems
Author
V. Passi
Universite catholique de Louvain
IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
U. Bhaskar
Universite catholique de Louvain
T. Pardoen
Universite catholique de Louvain
Ulf Södervall
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Bengt Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Göran Petersson
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Mats Hagberg
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
J. P. Raskin
Universite catholique de Louvain
Journal of Microelectromechanical Systems
1057-7157 (ISSN)
Vol. 21 4 822-829 6179958Subject Categories
Physical Sciences
DOI
10.1109/JMEMS.2012.2190711