Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm
Journal article, 2012

Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 μm when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 °C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.

MBE

InGaAsBi

1.3 mum

Dilute bismide

optical fiber communication

quantum well

Author

Hong Ye

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Yi Gu

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

AIP Advances

2158-3226 (ISSN)

Vol. 2 4 042158- 042158

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Telecommunications

Other Electrical Engineering, Electronic Engineering, Information Engineering

Infrastructure

Nanofabrication Laboratory

DOI

10.1063/1.4769102

More information

Latest update

5/23/2018