Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs

Giuseppe Moschetti; Niklas Wadefalk; Per-Åke Nilsson; Morteza Abbasi; L. Desplanque; X. Wallart; Jan Grahn

Cryogenic Operation of InAs/AlSb HEMT Hybrid LNAs
Paper in proceeding, 2012

The suitability of InAs/AlSb HEMTs for cryogenic ultra low-power applications is investigated. Compared to room temperature, the device exhibited significantly improved drain current saturation, higher peak transconductance and lower gate current leakage at around 10 K. When tested in a three-stage hybrid 4-8 GHz LNA under cryogenic conditions, the LNA noise figure was 0.27 dB at an extremely low power consumption of 0.6 mW per stage.

InAs/AlSb

ultra-low power

low noise

LNA

Hybrid

high electron mobility transistor (HEMT)