Molecular beam epitaxy growth of InSb1-xBix thin films
Journal article, 2013

Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.

Bismuth compounds

Molecular beam epitaxy

Semiconducting III-V materials

Semiconducting ternar compounds

Author

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Ivy Saha Roy

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Peixiong Shi

Technical University of Denmark (DTU)

A. Hallen

Royal Institute of Technology (KTH)

Zonghe Lai

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Journal of Crystal Growth

0022-0248 (ISSN)

Vol. 378 323-328

Subject Categories

Atom and Molecular Physics and Optics

DOI

10.1016/j.jcrysgro.2012.12.085

Publication data connected to DOI

More information

Latest update

2/28/2018

Feedback and support

If you have questions, need help, find a bug or just want to give us feedback you may use this form, or contact us per e-mail research.lib@chalmers.se or by phone 46 (0)31-772 3744.

About

Research.chalmers.se contains research information from Chalmers University of Technology, Sweden. It includes information on projects, publications, research funders and collaborations.

More about coverage period and what is publicly available

Privacy and cookies

Links

Chalmers Library
Chalmers Research
Research projects at chalmers.se

Chalmers University of Technology

SE-412 96 GOTHENBURG, SWEDEN
PHONE: +46 (0)31-772 10 00
WWW.CHALMERS.SE