Thermal creation of electron spin polarization in n-type silicon
Journal article, 2013

Conversion of heat into a spin-current in electron doped silicon can offer a promising path for spin-caloritronics. Here, we create an electron spin polarization in the conduction band of n-type silicon by producing a temperature gradient across a ferromagnetic tunnel contact. The substrate heating experiments induce a large spin signal of 95 μV, corresponding to 0.54 meV spin-splitting in the conduction band of n-type silicon by Seebeck spin tunneling mechanism. The thermal origin of the spin injection has been confirmed by the quadratic scaling of the spin signal with the Joule heating current and linear dependence with the heating power.

CONTACTS

ACCUMULATION

FERROMAGNET

INJECTION

SPINTRONICS

Author

André Dankert

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Saroj Prasad Dash

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 103 article nr. 242405- 242405

Areas of Advance

Nanoscience and Nanotechnology

Subject Categories

Physical Sciences

Nano Technology

DOI

10.1063/1.4845295