Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition
Journal article, 2014

We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

fluctuations

asymmetry

thermopower

chemical vapor deposition

graphene

Author

Youngwoo Nam

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Jie Sun

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Niclas Lindvall

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Seung Jae Yang

Seoul National University

Chong Rae Park

Seoul National University

YungWoo Park

Seoul National University

Avgust Yurgens

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 104 2 021902 - 021902

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Roots

Basic sciences

Subject Categories

Nano Technology

Condensed Matter Physics

Infrastructure

Nanofabrication Laboratory

DOI

10.1063/1.4861745

More information

Created

10/8/2017