Electric field effects on spin accumulation in Nb-doped SrTiO3 using tunable spin injection contacts at room temperature
Journal article, 2014

We report on features in charge transport and spin injection in an oxide semiconductor, Nb-doped SrTiO3. This is demonstrated using electrically tunable spin injection contacts which exploit the large electric field at the interface and its interplay with the relative permittivity of the semiconductor. We realize spin accumulation in Nb-doped SrTiO3 which displays a unique dependence of the spin lifetime with bias polarity. These findings suggest a strong influence of the interface electric field on the charge transport as well as on spin accumulation unlike in conventional semiconductors and opens up promising avenues in oxide spintronics.

Author

Saroj Prasad Dash

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

A. M. Kamerbeek

University of Groningen

André Dankert

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

B. J. van Wees

University of Groningen

T Banerjee

University of Groningen

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 104 21 212106

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Physical Sciences

Nano Technology

DOI

10.1063/1.4880895

More information

Latest update

11/27/2018