High gain graphene field effect transistors for wideband amplifiers
Paper in proceeding, 2014
We demonstrate graphene field of transistors (G-FETs) providing power gain of > 7 dB in a 50 O system. The G-FETs have S
21
> 0 dB up to 7 GHz. The result indicates the feasibility for G-FET based wideband amplifiers.
wideband amplifiers
Graphene FET
power gain
hydrogen intercalated graphene
Author
Omid Habibpour
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Michael Winters
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014; Fiera di RomaRome; Italy; 6 October 2014 through 9 October 2014
371-373
978-287487035-4 (ISBN)
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/EuMC.2014.6986447
ISBN
978-287487035-4