High gain graphene field effect transistors for wideband amplifiers
Paper in proceedings, 2014

We demonstrate graphene field of transistors (G-FETs) providing power gain of > 7 dB in a 50 O system. The G-FETs have S 21 > 0 dB up to 7 GHz. The result indicates the feasibility for G-FET based wideband amplifiers.

wideband amplifiers

Graphene FET

power gain

hydrogen intercalated graphene

Author

Omid Habibpour

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Michael Winters

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014; Fiera di RomaRome; Italy; 6 October 2014 through 9 October 2014

371-373

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/EuMC.2014.6986447

ISBN

978-287487035-4

More information

Created

10/7/2017