A highly linear double balanced Schottky diode S-band mixer
Journal article, 2006
A high-level double balanced SiC Schottky diode mixer in SiC monolithic microwave integrated circuit (MMIC) technology has been designed, processed and characterized. The mixer is a single ended in- and output circuit with coupled transformers as baluns to enable a compact design, resulting in a total area of 2.2×2.2mm2. The mixer has a maximum IIP3 of 38dBm and IIP2 of 58dBm at 3.3GHz, and a typical P1 dB of 23dBm in the S-band. The minimum conversion loss was 12dBm at 2.4GHz. The high power operation of the mixer shows that SiC MMIC can perform well in high microwave radiation environments
Author
Mattias Sudow
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Kristoffer Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Microwave and Wireless Components Letters
1531-1309 (ISSN) 15581764 (eISSN)
Vol. 16 6 336 - 8 1637487Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/LMWC.2006.875625