Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL
Paper in proceedings, 2016

We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 μm and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.

semiconductor lasers

High-speed modulation

vertical-cavity surface-emitting laser (VCSEL).

silicon photonics

optical interconnects

large signal modulation

Author

Emanuel Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Sulakshna Kumari

Ghent university

Petter Westbergh

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Gunther Roelkens

Ghent university

Roel G. Baets

Ghent university

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN) 1996756X (eISSN)

Vol. 9766 976607

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology

Subject Categories

Telecommunications

Infrastructure

Nanofabrication Laboratory

DOI

10.1117/12.2207301

ISBN

978-1-5106-0001-0