20-Gb/s Modulation of Silicon-Integrated Short-Wavelength Hybrid-Cavity VCSELs
Journal article, 2016

We investigate the dynamics of silicon-integrated 850-nm-wavelength hybrid-cavity vertical-cavity surface-emitting lasers (VCSELs). The VCSELs consist of a GaAs-based half-VCSEL attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin divinylsiloxane-bis-benzocyclobutene adhesive bonding. A 5-┬Ám oxide aperture diameter VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation characteristics are found to be impaired by the high thermal impedance.

semiconductor lasers

silicon photonics

High-speed modulation

vertical-cavity surface-emitting laser (VCSEL)

optical interconnects

large signal modulation

Author

Emanuel Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Sulakshna Kumari

Ghent university

Petter Westbergh

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Roel G. Baets

Ghent university

Gunther Roelkens

Ghent university

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

IEEE Photonics Technology Letters

1041-1135 (ISSN)

Vol. 28 8 856 - 859

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology

Subject Categories

Telecommunications

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/LPT.2016.2514699

More information

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3/6/2018 1