Resistive SiC-MESFET mixer
Journal article, 2002

A single-ended silicon carbide resisitve MESFET mixer with minimum conversion loss (CL) of 10.2 dB and an input third order intercept point of 35.7 dB at 3.3 GHz was designed and characterized. A lumped-element, large-signal model was used for modeling the device. The drain-source resistance was measured by taking the real part of the output port impedence. Analysis suggested that the optimum gate bias for minimum CL was -6.7 V.

Electric resistance

Frequency converters

Frequency modulation

MESFET devices

Energy gap

Silicon carbide

Bandpass filters

Computer simulation

Electric conductivity

Mixer circuits


Kristoffer Andersson

Department of Microelectronics

Joakim Eriksson

Department of Microelectronics

Niklas Rorsman

Department of Microelectronics

Herbert Zirath

Department of Microelectronics

IEEE Microwave and Wireless Components Letters

Vol. 12 4 119-121

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering



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