F-band resistive mixer based on heterostructure field effect transistor technology
Paper in proceedings, 1993

A fundamentally pumped millimeter wave resistive mixer based on an HFET technology working at F-band (90-140 GHz) is described for the first time. Nonlinear simulations have been performed for this mixer based on an specially designed double δ-doped pseudomorphic HFET device developed for this application. A minimum conversion loss between 12 to 13 dB was measured with the RF fixed at different frequencies between 108 to 114 GHz at an RF power of -13 dBm. Both theoretical and experimental results are presented in this paper.


Iltcho Angelov

Department of Microwave Technology

Herbert Zirath

Department of Microwave Technology

Niklas Rorsman

Department of Microwave Technology

Christer Karlsson

Department of Microwave Technology

Robert M weikle

Department of Microwave Technology

Proceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems

0149-645X (ISSN)

Vol. 2 787-790

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering



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