A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics
Journal article, 2017

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

doping

organic thermoelectrics

polymer semiconductor

ternary blend

Author

David Kiefer

Chalmers, Chemistry and Chemical Engineering, Applied Chemistry, Polymer Technology

Liyang Yu

Chalmers, Chemistry and Chemical Engineering, Applied Chemistry, Polymer Technology

Erik Fransson

Chalmers, Physics, Materials and Surface Theory

A. Gomez

Universitat Autonoma de Barcelona (UAB)

Daniel Priemetzhofer

Uppsala University

A. Amassian

King Abdullah University of Science and Technology (KAUST)

M. Campoy-Quiles

Universitat Autonoma de Barcelona (UAB)

Christian Müller

Chalmers, Chemistry and Chemical Engineering, Applied Chemistry, Polymer Technology

Advanced Science

2198-3844 (ISSN)

Vol. 4 1 1600203- 1600203

Subject Categories

Polymer Technologies

Areas of Advance

Materials Science

DOI

10.1002/advs.201600203

More information

Latest update

4/12/2018