Carbon-doped GaN on SiC materials for low-memory-effect devices
Paper in proceeding, 2016

AlGaN/GaN on SiC HEMT structures suitable for high power, high frequency applications are demonstrated. The material manifests record breaking thermal management and electron mobility. Moreover, thanks to the fact that the buffer layer is doped with carbon, the memory effect of processed devices is very low making system design and manufacturing significantly easier and less expensive.

Author

J. T. Chen

SweGaN AB

Erik Janzén

Linköping University

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Michael Andersson

SweGaN AB

O. Kordina

SweGaN AB

ECS Transactions

19385862 (ISSN) 19386737 (eISSN)

Vol. 75 12 61-65
978-160768539-5 (ISBN)

Subject Categories

Nano Technology

DOI

10.1149/07512.0061ecst

ISBN

978-160768539-5

More information

Latest update

2/28/2018