Generation of multi-Gigabit/s OFDM signals at W-band with a graphene FET MMIC mixer
Paper in proceedings, 2017

This paper presents multi-Gigabit/s Orthogonal Frequency Division Multiplexing (OFDM) signal generation by using a graphene field effect transistor based resistive mixer at w-band. The OFDM signals consist of 64 subcarriers each carrying a quadrature-phase-shift-keying (QPSK) symbols. The results show that a bit error rate of 10 -4 is achievable for 8 Gbps data rate.

MMIC

W-band

High data rate communication

OFDM

Resistive mixer

Graphene FET

Author

Omid Habibpour

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Dhecha Nopchinda

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Zhongxia Simon He

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

1185-1187 8058813

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Building Futures (2010-2018)

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Driving Forces

Sustainable development

Subject Categories

Materials Engineering

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

DOI

10.1109/MWSYM.2017.8058813

ISBN

9781509063604

More information

Latest update

3/23/2018