A 100-µW 4-6 GHz Cryogenic InP HEMT LNA Achieving an Average Noise Temperature of 2.6 K
Paper in proceeding, 2022
Low-power LNAs at 4 K are critical for the scaling up of quantum computing systems due to the limited cooling capability in the dilution refrigerator. This paper presents design and fabrication of a cryogenic hybrid three-stage InP HEMT LNA working from 4 to 6 GHz. The design was conducted using a DC power optimized bias model of the InP HEMT. The 4 K measurement showed 2.6 K average noise temperature and more than 22 dB average gain of the InP HEMT LNA consuming only 100 µW DC power.
Quantum computing
Low-noise amplifier
Hybrid integrated circuit
InP HEMT
Low-power
Cryogenic
Author
Yin Zeng
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jörgen Stenarson
Low Noise Factory AB
Peter Sobis
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Low Noise Factory AB
Niklas Wadefalk
Low Noise Factory AB
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Asia-Pacific Microwave Conference Proceedings, APMC
Vol. 2022-November 13-15
9784902339567 (ISBN)
2022 Asia-Pacific Microwave Conference, APMC 2022
Yokohama, Japan,
Yokohama, Japan,
Subject Categories
Physical Sciences
Nano Technology
Chemical Sciences