A GaN MMIC Wideband Continuous-Mode Doherty Power Amplifier for 6G FR3 cmWave Applications
Paper in proceeding, 2024

This paper presents a 10-14 GHz Doherty power amplifier (PA) implemented in GaN on SiC MMIC process aimed for future 6G FR3 centimeter-wave (cmWave) applications. We propose the theory and design of the continuous-mode (CM) operations to extend Doherty PA bandwidth. To demonstrate the
viability of the concept, a prototype GaN MMIC CM Doherty PA was fabricated and fully characterized. Experimental results exhibit a peak power added efficiency (PAE) of 28% - 38% and back-off PAE of 21%- 31%, respectively, with an output power higher than 34 dBm across the operating frequencies.

wideband

MMIC

load modulation

power amplifier (PA)

gallium nitride (GaN)

Doherty

Continuous mode

6G

Author

Han Zhou

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Victor Åberg

Embedded Electronics Systems and Computer Graphics

Haojie Chang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

2024 19th European Microwave Integrated Circuits Conference, EuMIC 2024

2024 19th European Microwave Integrated Circuits Conference, EuMIC 2024
Paris, France,

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Latest update

6/11/2024