Optimization of the UTC-PD Epitaxy for Photomixing at 340 GHz

Journal article, 2008

We present a method to optimize the epitaxial layer structure of an InGaAs/InP uni-traveling-carrier photo-diode (UTC-PD) for continuous THz-wave generation. The design approach used is general in that it can be applied for any target frequency while this study focuses on 340 GHz. The photodiode epitaxy is modeled and optimized using a TCAD software implementing the hydrodynamic semiconductor equations. This physical device model was found to be in good agreement with reported experimental results. It is shown that the UTC-PD can generate ~1 mW at 340 GHz by choosing the optimum absorption layer and collection layer thicknesses.