Influence of gate position on dispersion characteristics of GaN HEMTs
Paper in proceeding, 2008
GAN HEMTs with varying design have been fabricated to optimize device performance. The focus of this report is the minimization of drain current dispersion by the variation of the electric field distribution. In this work this is done by varying the placement of the gate and to some extent varying gate length and length of the gate connected field plate. We present pulsed IV characteristics for a number of different device designs.
Author
Martin Fagerlind
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Urban Forsberg
Anders Lundskog
Anelia Kakanakova-Gerorgieva
Erik Janzén
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
WOCSDICE 2008, Abstract book
99-100
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering