Large signal evaluation of nonlinear HBT model
Paper i proceeding, 2007

The performance of recently developed Large Signal (LS) HBT model was evaluated with extensive LS measurements like Power spectrum, Load pull and Inter-modulation investigations. Proposed model has adopted temperature dependent leakage resistance and a simplified capacitance models. The model was implemented in ADS as SDD. Important feature of the model is that the main model parameters are taken directly from measurements in rather simple and understandable way. Results show good accuracy despite the simplicity of the model. To our knowledge the HBT model is one of a few HBT models which can handle high current & Power HBT devices, with significantly less model parameters with good accuracy.

HBT

nonlinear circuits

bipolar transistor models

large signal model

Författare

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

A. Inoue

Mitsubishi Electric Corporation

S. Watanabe

Mitsubishi Electric Corporation

IEICE Transactions on Electronics

0916-8524 (ISSN)

Vol. E91C 7 1091-1097

Ämneskategorier

Fysik

DOI

10.1093/ietele/e91-c.7.1091

Mer information

Skapat

2017-10-06