On the Large-Signal Modelling of AlGaN/GaN HEMTs; GaAs ; and SiC MESFETs - Invited
Paper i proceeding, 2005

Abstract. A general purpose LS model for GaAs, GaN and SiC FET devices was developed and evaluated with DC, S, and Large Signal measurements (LS). The FET model is generalized and extended with new feature in order to improve the management of harmonics, provide a more physical treatment of the dispersion as well as delay and model other specific effects in these devices. The model was implemented in a commercial CAD tool and exhibit good overall accuracy.

Författare

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

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