Cracks in GaN/AlN multiple quantum well structures grown by MBE
Paper i proceeding, 2008

Due to the large lattice constant mismatch and thermal expansion coefficient difference between GaN and AlN, large strain is generated inside the GaN/AlN multiple quantum wells, which causes cracks in the structure. We investigated such cracks by optical microscopy and AFM. The crack density was studied with buffer and cap layer thickness, the number of quantum well periods, and the temperature reduction rate after growth as parameters. It was found that the crack density increased exponentially, with the number of periods above 4. Besides, a very thin, 100 nm, GaN buffer layer and similar to 300 nm GaN cap layer greatly reduced the crack density.

Författare

Xinju Liu

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

T. Aggerstam

Kungliga Tekniska Högskolan (KTH)

P. Holmstrom

Sophia University

S. Lourdudoss

Kungliga Tekniska Högskolan (KTH)

Thorvald Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Journal of Physics: Conference Series

1742-6588 (ISSN)

Vol. 100 PART 4

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1088/1742-6596/100/4/042026

ISBN

1742-6588

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Senast uppdaterat

2018-02-26